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Same model may have multiple batches, images only for reference.
IPD60R800CEAUMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD60R800CEAUMA1

Part No IPD60R800CEAUMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description CONSUMER  /  N-Channel 600 V 8.4A (Tc) 74W (Tc) Surface Mount PG-TO252-3-344
Datasheet
IPD60R800CEAUMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs 17.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 373 pF @ 100 V
Power Dissipation (Max) 74W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO252-3-344
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD60R800
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 448-IPD60R800CEAUMA1CT,2156-IPD60R800CEAUMA1,ROCINFIPD60R800CEAUMA1,IPD60R800CEAUMA1-ND,SP001396890,448-IPD60R800CEAUMA1DKR,448-IPD60R800CEAUMA1TR
Standard Package 2,500
Win Source Part Number 1065250-IPD60R800CEAUMA1
Ultra Librarian 3D Model Ultra Librarian IPD60R800CEAUMA1 CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel polarity component designed to operate in a temperature range of -40°C to 150°C (TJ).

  • Maximum Power Dissipation: 74W (Tc)
  • Drain-Source Voltage: 600V
  • Continuous Drain Current: 8.4A (Tc)
  • Maximum Rds On: 800mOhm @ 2A, 10V
  • Maximum Gate Charge: 17.2 nC @ 10V
  • Maximum Input Capacitance: 373 pF @ 100 V
  • Maximum Vgs: ±20V

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