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Same model may have multiple batches, images only for reference.
IPD65R420CFDATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD65R420CFDATMA1

Part No IPD65R420CFDATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 8.7A TO252
Datasheet
IPD65R420CFDATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 300μA
Max Gate Charge 31.5nC @ 10V
Max Input Capacitance 870pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83.3W (Tc)
Maximum Rds On at Id,Vgs 420 mOhm @ 3.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 107421-IPD65R420CFDATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD65R420CFDATMA1 CAD Model

Description

The Infineon Technologies 107421-IPD65R420CFDATMA1 is a N-Channel MOSFET transistor which is ideal for use in various applications.

  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 8.7A @ 25°C
  • Maximum Rds On: 420 mOhm @ 3.4A and 10V
  • Gate-Source Threshold Voltage: 4.5V @ 300μA
  • Maximum Gate Charge: 31.5nC @ 10V
  • Maximum Input Capacitance: 870pF @ 100V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO252-3
  • Power Dissipation: 83.3W (Tc)
  • Category: Discrete Semiconductor Product
  • Alternative Part Cross-Reference: IPD65R420CFD, R6010MND3TL, and STD13NM60ND

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Quantity Unit Price Ext. Price
35+ $1.8761 $65.6635
80+ $1.5394 $123.1520
120+ $1.4913 $178.9560
165+ $1.4432 $238.1280
210+ $1.3952 $292.9920
280+ $1.2508 $350.2240
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