The 603492-IPD65R660CFD is a N-Channel MOSFET (Metal Oxide) transistor from Infineon Technologies.

• Part of the CoolMOS™ CFD2 series
• Designed for use in discrete semiconductor products
• Drain to source voltage (Vdss): 650 V
• Continuous drain current (Id): 6A (Tc) @ 25°C
• Rds On (Max): 660mOhm @ 2.1A, 10V
• Gate charge (Qg): 22 nC @ 10 V
• Input capacitance (Ciss): 615 pF @ 100 V
• Operating temperature range: -55°C to 150°C (TJ)
• Surface mountable
• Comes in a TO-252-3, DPak package
• Available in bulk packaging with a standard package of 360 pcs
• An ideal choice for various electronic designs