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Same model may have multiple batches, images only for reference.
IPD70N03S4L-04 Real Image
Same model may have multiple batches, images only for reference.

IPD70N03S4L-04

Part No IPD70N03S4L-04
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 70A TO252-3
Datasheet
IPD70N03S4L-04 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 30μA
Max Gate Charge 48nC @ 10V
Max Input Capacitance 3300pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 4.3 mOhm @ 70A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 017327-IPD70N03S4L-04
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPD70N03S4L-04 CAD Model

Description

The Infineon Technologies 017327-IPD70N03S4L-04 is a MOSFET technology-based electronic component that is used in various applications.

  • Discrete Semiconductor Product: Yes
  • Status: active
  • Maximum Power Dissipation: 68W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Supply and Demand Status: sufficient

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155+ $0.7516 $116.4980
240+ $0.7281 $174.7440
330+ $0.7046 $232.5180
425+ $0.6811 $289.4675
570+ $0.6107 $348.0990
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