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IPD70N12S3L12ATMA1

Part No IPD70N12S3L12ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CHANNEL_100+ / N-Channel 120 V 70A (Tc) 125W (Tc) Surface Mount PG-TO252-3-11
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.5mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 2.4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5550 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD70
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 960317-IPD70N12S3L12ATMA1
Ultra Librarian 3D Model Ultra Librarian IPD70N12S3L12ATMA1 CAD Model

Description

The IPD70N12S3L12ATMA1 is a single N-channel MOSFET transistor.

  • Design: Designed for use in discrete semiconductor products such as power management applications
  • Drain to Source Voltage (Vdss): 120V
  • Continuous Drain Current (Id): 70A @ 25°C
  • On-Resistance: 11.5mOhm
  • Gate Threshold Voltage (Vgs(th)): 2.4V
  • Maximum Power Dissipation: 125W
  • Installation: Suitable for surface mount installation
  • Package: TO-252-3, DPak package
  • Gate Charge (Qg): 77nC
  • Input Capacitance (Ciss): 5550pF
  • Operating Temperature Range: -55°C to 175°C
  • Status: Obsolete product from Infineon Technologies

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