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Same model may have multiple batches, images only for reference.
IPD75N04S4-06 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPD75N04S4-06

Part No IPD75N04S4-06
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPD75N04 - 20V-40V N-CHANNEL AUT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.9mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2550 pF @ 25 V
Power Dissipation (Max) 58W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 603499-IPD75N04S4-06
Ultra Librarian 3D Model Ultra Librarian IPD75N04S4-06 CAD Model

Description

The 603499-IPD75N04S4-06 is a single N-channel MOSFET transistor from the OptiMOS™ series.

  • Drain to Source Voltage: 40V
  • Continuous Drain Current: 75A @ 25°C
  • Maximum Rds On: 5.9mOhm @ 75A and 10V
  • Gate Threshold Voltage: 4V @ 26μA
  • Maximum Power Dissipation: 58W @ 25°C
  • Gate Charge: 32nC @ 10V
  • Input Capacitance: 2550pF @ 25V
  • Operating Temperature Range: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3391 $50.8650
360+ $0.2783 $100.1880
560+ $0.2696 $150.9760
770+ $0.2609 $200.8930
995+ $0.2522 $250.9390
1,330+ $0.2261 $300.7130
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Availability: 20,000 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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