The IPD90R1K2C3 from Infineon Technologies is an N-Channel polarity MOSFET transistor.

• Maximum Power Dissipation: 83W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Status: obsolete (EOL)
• Temperature Range: -55°C to 150°C (TJ)
• Mounting: SMD (SMT)
• Package: PG-TO252-3
• Drain-Source Breakdown Voltage: 900V
• Continuous Drain Current @ 25°C: 5.1A (Tc)
• Gate-Source Threshold Voltage: 3.5V @ 310μA
• Maximum Gate Charge: 28nC @ 10V
• Maximum Input Capacitance: 710pF @ 100V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On @ Id,Vgs: 1.2 Ohm @ 2.8A, 10V