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IPD95R2K0P7ATMA1

Part No IPD95R2K0P7ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 950V 4A TO252-3  /  N-Channel 950 V 4A (Tc) 37W (Tc) Surface Mount PG-TO252-3
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id 3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 400 V
Power Dissipation (Max) 37W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD95R2
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IPD95R2K0P7ATMA1DKR,IPD95R2K0P7ATMA1CT,SP001819720,IPD95R2K0P7ATMA1TR
Standard Package 2,500
Win Source Part Number 980930-IPD95R2K0P7ATMA1
Ultra Librarian 3D Model Ultra Librarian IPD95R2K0P7ATMA1 CAD Model

Description

Infineon Technologies presents IPD95R2K0P7ATMA1, a CoolMOS™ P7 MOSFET transistor designed for SMD mounting.

  • Manufacturer: Infineon Technologies
  • Maximum Drain to Source Voltage: 950V
  • Continuous Drain Current: 4A (Tc)
  • Power Dissipation: 37W (Tc)
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Gate Charge: 10 nC @ 10 V
  • Input Capacitance: 330 pF @ 400 V

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9069 $54.4140
135+ $0.7441 $100.4535
210+ $0.7209 $151.3890
290+ $0.6976 $202.3040
375+ $0.6744 $252.9000
500+ $0.6046 $302.3000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,750 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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