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IPF09N03LA

Part No IPF09N03LA
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A DPAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 13nC @ 5V
Max Input Capacitance 1642pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 63W (Tc)
Maximum Rds On at Id,Vgs 8.6 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package P-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045903-IPF09N03LA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPF09N03LA CAD Model

Description

The Infineon Technologies MOSFET with Win Source Part Number 1045903-IPF09N03LA is a high-power N-Channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 63W (Tc)
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 50A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 20μA
  • Maximum Gate Charge: 13nC @ 5V
  • Maximum Input Capacitance: 1642pF @ 15V
  • Maximum Rds On @ Id,Vgs: 8.6 mOhm @ 30A, 10V
  • Package: P-TO252-3
  • Mounting: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.8777 $61.4390
165+ $0.7203 $118.8495
250+ $0.6978 $174.4500
345+ $0.6752 $232.9440
445+ $0.6527 $290.4515
595+ $0.5851 $348.1345
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,200 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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