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IPF13N03LA G Real Image
Same model may have multiple batches, images only for reference.

IPF13N03LA G

Part No IPF13N03LA G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 30A DPAK
Datasheet
IPF13N03LA G Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 8.3nC @ 5V
Max Input Capacitance 1043pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 46W (Tc)
Maximum Rds On at Id,Vgs 12.8 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package P-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 100289-IPF13N03LA G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPF13N03LA G CAD Model

Description

The Infineon Technologies 100289-IPF13N03LA G is an N-channel MOSFET transistor designed for use in various applications including power supplies, inverters, and motor drives.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 30A (Tc)
  • Maximum Rds On: 12.8 mOhm @ 30A, 10V
  • Gate-Source Threshold Voltage: 2V @ 20μA
  • Maximum Gate Charge: 8.3nC @ 5V
  • Maximum Input Capacitance: 1043pF @ 15V
  • Package: P-TO252-3 case/package
  • Status: obsolete (EOL)
  • Supply: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.7300 $65.7000
220+ $0.5991 $131.8020
335+ $0.5803 $194.4005
465+ $0.5616 $261.1440
600+ $0.5430 $325.8000
800+ $0.4866 $389.2800
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Availability: 34,100 pieces
MOQ: 90 pcs
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