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IPI600N25N3G

Part No IPI600N25N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPI600N25 - 12V-300V N-CHANNEL P
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 100 V
Power Dissipation (Max) 136W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 603565-IPI600N25N3G
Ultra Librarian 3D Model Ultra Librarian IPI600N25N3G CAD Model

Description

The 603565-IPI600N25N3G is a N-Channel MOSFET transistor from Infineon Technologies. It is part of the OptiMOS™ 3 series and is designed for high power applications.

  • Drain to Source Voltage (Vdss): 250V
  • Continuous Drain Current (Id): 25A
  • Rds On (Max): 60mOhm @ 25A and 10V
  • Gate Charge (Qg): 29nC @ 10V
  • Package Type: Through hole
  • Description: With its high power rating and reliable performance, it offers efficient and stable operation in demanding environments.

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