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Same model may have multiple batches, images only for reference.
IPI600N25N3GAKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPI600N25N3GAKSA1

Part No IPI600N25N3GAKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 25A TO262-3
Datasheet
IPI600N25N3GAKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 90μA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 2350pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1045928-IPI600N25N3GAKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPI600N25N3GAKSA1 CAD Model

Description

The Infineon Technologies IPI600N25N3GAKSA1 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • MOSFET Type: N-Channel
  • Breakdown Voltage: 250V
  • Continuous Drain Current: 25A @ 25°C
  • Power Dissipation: 136W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 90μA
  • Rds On at Id, Vgs: 60 mOhm @ 25A, 10V
  • Package: PG-TO262-3
  • Temperature Range: -55°C to 175°C (TJ)

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