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Same model may have multiple batches, images only for reference.
IPI60R165CPXKSA1
Same model may have multiple batches, images only for reference.

IPI60R165CPXKSA1

Part No IPI60R165CPXKSA1
Manufacturer Infineon Technologies
Catalog Transistors – FETs, MOSFETs – Single
Description HIGH POWER_LEGACY
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 165mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3.5V @ 790µA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 100 V
Power Dissipation (Max) 192W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Case / Package TO-262-3 Long Leads, I²Pak, TO-262AA
Package Tube
Supply and Demand Status Shortage
Win Source Part Number 1495220-IPI60R165CPXKSA1
Ultra Librarian 3D Model Ultra Librarian IPI60R165CPXKSA1 CAD Model

Description

N

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