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Same model may have multiple batches, images only for reference.
IPI70N04S406AKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPI70N04S406AKSA1

Part No IPI70N04S406AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 70A TO262-3 / N-Channel 40 V 70A (Tc) 58W (Tc) Through Hole PG-TO262-3
Datasheet
IPI70N04S406AKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2550 pF @ 25 V
Power Dissipation (Max) 58W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number IPI70N04
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names INFINFIPI70N04S406AKSA1,2156-IPI70N04S406AKSA1,SP000711484,IPI70N04S4-06,IPI70N04S4-06-ND
Standard Package 500
Win Source Part Number 1065265-IPI70N04S406AKSA1
Ultra Librarian 3D Model Ultra Librarian IPI70N04S406AKSA1 CAD Model

Description

The IPI70N04S406AKSA1 is an N-Channel MOSFET transistor manufactured by Infineon Technologies.

  • Series: OptiMOS
  • Use: Discrete semiconductor products
  • Drain to Source Voltage: 40V
  • Continuous Drain Current: 70A @ 25°C
  • Maximum Rds On: 6.5mOhm @ 70A
  • Gate Charge: 32nC @ 10V
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Maximum Power Dissipation: 58W @ Tc
  • RoHS Compliant: Yes
  • ECCN: EAR99

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90+ $1.2931 $116.3790
140+ $1.2527 $175.3780
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330+ $1.0506 $346.6980
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