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Same model may have multiple batches, images only for reference.
IPI70R950CE Real Image
Same model may have multiple batches, images only for reference.

IPI70R950CE

Part No IPI70R950CE
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description POWER FIELD-EFFECT TRANSISTOR / N-Channel 700 V 7.4A (Tc) 68W (Tc) Through Hole PG-TO262-3-1
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 150mA
Gate Charge (Qg) (Max) @ Vgs 15.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 328 pF @ 100 V
Power Dissipation (Max) 68W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Standard Package 1
HTSUS 0000.00.0000
Win Source Part Number 1345672-IPI70R950CE
Ultra Librarian 3D Model Ultra Librarian IPI70R950CE CAD Model

Description

The IPI70R950CE is a CoolMOS™ N-Channel MOSFET from Infineon Technologies.

  • Application: Power supplies, motor drives, and inverters
  • Power Levels: Up to 68W
  • Voltage: 700V
  • Package: TO-262-3 Long Leads, I²Pak, TO-262AA
  • Standard Package: 1
  • MSL Level: Not specified
  • Gate Charge: 15.3 nC @ 10V
  • Input Capacitance: 328 pF @ 100V

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