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IPI80N04S4-03

Part No IPI80N04S4-03
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 80A TO262-3-1
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 53μA
Max Gate Charge 66nC @ 10V
Max Input Capacitance 5260pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 3.7 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 040642-IPI80N04S4-03
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPI80N04S4-03 CAD Model

Description

The Infineon Technologies MOSFET is a high-performance transistor designed for use in discrete semiconductor products.

  • Polarity: N-channel polarity transistor
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 80A (Tc) @ 25°C
  • Maximum Gate Charge: 66nC @ 10V
  • Maximum Input Capacitance: 5260pF @ 25V
  • Package: PG-TO262-3 package
  • Mounting Type: Suitable for through-hole mounting
  • Application: Ideal for use in power electronics applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.9128 $66.9480
75+ $1.5696 $117.7200
115+ $1.5204 $174.8460
160+ $1.4715 $235.4400
205+ $1.4224 $291.5920
275+ $1.2753 $350.7075
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,600 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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