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Same model may have multiple batches, images only for reference.
IPL60R299CP Real Image
Same model may have multiple batches, images only for reference.

IPL60R299CP

Part No IPL60R299CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 11.1A 4VSON
Datasheet
IPL60R299CP Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 11.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 440μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 1100pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 96W (Tc)
Maximum Rds On at Id,Vgs 299 mOhm @ 6.6A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-VSON-4
Dimension 4-PowerTSFN
Win Source Part Number 1045943-IPL60R299CP
Family Name IPL60R299CP
Introduction Date April 28, 2010
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPL60R299CP CAD Model

Description

The Infineon Technologies IPL60R299CP is an N-channel MOSFET with a breakdown voltage of 650V and a continuous drain current of 11.1A (Tc).

  • Maximum Power Dissipation: 96W (Tc)
  • Package: PG-VSON-4
  • Gate-Source Threshold Voltage: 3.5V @ 440μA
  • Maximum Rds On @ Id,Vgs: 299 mOhm @ 6.6A, 10V
  • Operating Temperature Range: -40°C to 150°C (TJ)
  • Supply and Demand Status: Balanced
  • Compliance: Halogen-free standards

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