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IPN70R2K0P7SATMA1

Part No IPN70R2K0P7SATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 700V 3A SOT223 / N-Channel 700 V 3A (Tc) 6W (Tc) Surface Mount PG-SOT223
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 3.8 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 130 pF @ 400 V
Power Dissipation (Max) 6W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223
Package / Case TO-261-4, TO-261AA
Base Product Number IPN70R2
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1337003-IPN70R2K0P7SATMA1
Ultra Librarian 3D Model Ultra Librarian IPN70R2K0P7SATMA1 CAD Model

Description

The IPN70R2K0P7SATMA1 is a discrete semiconductor product designed for use in single FET and MOSFET applications.

  • Device Type: MOSFET
  • Channel Type: N-Channel
  • Vdss: 700V
  • Power Dissipation: 6W (Tc)
  • Id: 3A (Tc)
  • Rds On (Max): 2Ohm @ 500mA, 10V
  • Vgs(th) (Max): 3.5V @ 30µA
  • Qg (Max): 3.8 nC @ 10 V
  • Ciss (Max): 130 pF @ 400 V
  • Mounting Type: Surface Mount
  • Package/Case: TO-261-4, TO-261AA
  • Manufacturer: Infineon Technologies

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4079 $63.3555
100+ $1.1550 $115.5000
155+ $1.1192 $173.4760
215+ $1.0834 $232.9310
280+ $1.0476 $293.3280
370+ $0.9390 $347.4300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,380 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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