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PTFB182503FLV2R250XTMA1

Part No PTFB182503FLV2R250XTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IC AMP RF LDMOS
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Status Active
Win Source Part Number 1090570-PTFB182503FLV2R250XTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian PTFB182503FLV2R250XTMA1 CAD Model

Description

The PTFB182503FLV2R250XTMA1 is an LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor manufactured by Infineon Technologies. It's designed for high-power, high-frequency applications, particularly in the RF (Radio Frequency) range. This transistor is often used in various communication and industrial applications requiring robust and efficient power amplification.

Applications:

  • Base station power amplifiers
  • Broadcast transmitters
  • Industrial heating and welding equipment
  • Medical RF applications (e.g., MRI)
  • Scientific instrumentation

Features:

  • High gain and efficiency
  • Designed for broadband operation
  • Excellent ruggedness
  • Internally matched for ease of use
  • Thermally enhanced package

Benefits:

  • Provides high power output with minimal power consumption
  • Allows for operation over a wide range of frequencies without significant performance degradation
  • Withstands high VSWR (Voltage Standing Wave Ratio) and other challenging operating conditions
  • Simplifies circuit design and reduces the need for external matching components
  • Efficiently dissipates heat, ensuring reliable operation at high power levels

Technical Specifications:

The PTFB182503FLV2R250XTMA1 is designed for operation in the frequency range of 1.8 GHz to 2.5 GHz. It delivers a power output of approximately 3 Watts. It operates at a supply voltage of 28V. It features a gain of around 13 dB. The device comes in a flanged package designed for efficient heat dissipation. It incorporates internal matching networks to simplify integration into amplifier circuits. This LDMOS transistor utilizes advanced manufacturing processes to achieve high reliability and performance. It is designed for high linearity. The efficiency of the transistor is typically around 50%. The device’s ruggedness is optimized to handle mismatched loads, thereby enhancing system reliability.

The PTFB182503FLV2R250XTMA1 from Infineon is a robust and efficient LDMOS transistor that is well-suited for high-power RF applications. Its high gain, efficiency, and ruggedness make it a reliable choice for demanding industrial and communication systems.

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