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IPP023N10N5AKSA1 Real Image1 IPP023N10N5AKSA1 Real Image2
Same model may have multiple batches, images only for reference.
IPP023N10N5AKSA1 Real Image1 IPP023N10N5AKSA1 Real Image2
IPP023N10N5AKSA1 Real Image1 IPP023N10N5AKSA1 Real Image2
Same model may have multiple batches, images only for reference.

IPP023N10N5AKSA1

Part No IPP023N10N5AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 120A TO220-3
Datasheet
IPP023N10N5AKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.8V @ 270μA
Max Gate Charge 210nC @ 10V
Max Input Capacitance 15600pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 375W (Tc)
Maximum Rds On at Id,Vgs 2.3 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1045948-IPP023N10N5AKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP023N10N5AKSA1 CAD Model

Description

The Infineon Technologies 1045948-IPP023N10N5AKSA1 is an N-Channel MOSFET transistor with a PG-TO-220-3 package.

  • Package: PG-TO-220-3
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current (Id): 120A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3.8V @ 270μA
  • Maximum Gate Charge: 210nC @ 10V
  • Maximum Rds On: 2.3 mOhm @ 100A @ 10V

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39+ $3.0342 $118.3338
60+ $2.9302 $175.8120
85+ $2.7212 $231.3020
111+ $2.6161 $290.3871
138+ $2.5110 $346.5180
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