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IPP041N12N3GXKSA1

Part No IPP041N12N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 120V 120A TO220-3 / N-Channel 120 V 120A (Tc) 300W (Tc) Through Hole PG-TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 211 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13800 pF @ 60 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP041
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 874827-IPP041N12N3GXKSA1
Ultra Librarian 3D Model Ultra Librarian IPP041N12N3GXKSA1 CAD Model

Description

The IPP041N12N3GXKSA1 is an N-Channel MOSFET from the OptiMOS™ series.

  • Drain to Source Voltage (Vdss): 120V
  • Continuous Drain Current (Id): 120A @ 25°C
  • On-Resistance: 4.1mOhm @ 100A and 10V
  • Gate-Source Voltage (Vgs): 4V @ 270μA
  • Power Dissipation: 300W @ a case temperature (Tc)
  • Mounting: through hole mountable
  • Package: TO-220-3
  • Gate Charge (Qg): 211nC @ 10V
  • Input Capacitance (Ciss): 13800pF @ 60V
  • Operating Temperature Range: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.5313 $58.7817
19+ $6.1100 $116.0900
30+ $5.8993 $176.9790
43+ $5.4779 $235.5497
55+ $5.2673 $289.7015
69+ $5.0566 $348.9054
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,870 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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