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IPP042N03LGXKSA1

Part No IPP042N03LGXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 70A TO-220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 3900pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 137076-IPP042N03LGXKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP042N03LGXKSA1 CAD Model

Description

The IPP042N03LGXKSA1 is a N-Channel MOSFET manufactured by Infineon Technologies.

  • Maximum Power Dissipation: 79W(Tc)
  • Continuous Drain Current at 25°C: 70A(Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 4.2 mOhm @ 30A, 10V
  • Maximum Gate Charge: 38nC @ 10V
  • Maximum Input Capacitance: 3900pF @ 15V
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0668 $58.6740
135+ $0.8754 $118.1790
205+ $0.8480 $173.8400
285+ $0.8207 $233.8995
365+ $0.7933 $289.5545
490+ $0.7112 $348.4880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,500 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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