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Same model may have multiple batches, images only for reference.
IPP048N04NG Real Image
Same model may have multiple batches, images only for reference.

IPP048N04NG

Part No IPP048N04NG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPP048N04 - 12V-300V N-CHANNEL P
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS® 3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.8mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 25 V
Power Dissipation (Max) 79W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 874828-IPP048N04NG
Ultra Librarian 3D Model Ultra Librarian IPP048N04NG CAD Model

Description

The 874828-IPP048N04NG is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: OptiMOS® 3
  • Application: discrete semiconductor products, specifically for FETs and MOSFETs
  • Drain to Source Voltage (Vdss): 40V
  • Continuous Drain Current (Id): 70A @ 25°C
  • Rds On (Max): 4.8mOhm @ 70A and 10V
  • Gate Charge (Qg): 41nC @ 10V
  • Mounting: Through-hole
  • Package: TO-220-3
  • Applications: power supplies, motor control, and lighting systems.

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Quantity Unit Price Ext. Price
4+ $15.2564 $61.0256
10+ $12.5179 $125.1790
15+ $12.1275 $181.9125
20+ $11.7360 $234.7200
26+ $11.3444 $294.9544
35+ $10.1709 $355.9815
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