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Same model may have multiple batches, images only for reference.
IPP04N03LB G Real Image
Same model may have multiple batches, images only for reference.

IPP04N03LB G

Part No IPP04N03LB G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A TO-220
Datasheet
IPP04N03LB G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 70μA
Max Gate Charge 40nC @ 5V
Max Input Capacitance 5203pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 107W (Tc)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 55A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1045957-IPP04N03LB G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPP04N03LB G CAD Model

Description

The Infineon Technologies IPP04N03LB G is an obsolete (EOL) N-channel MOSFET transistor designed for through-hole mounting.

  • Lifecycle Status: Obsolete (EOL)
  • Mounting Type: Through Hole
  • Case/Package: PG-TO220-3-1
  • Dimensions: TO-220-3
  • Maximum Power Dissipation: 107W (Tc)
  • Drive Voltage (max Rds On, min Rds On): 4.5V, 10V
  • Continuous Drain Current (25°C): 80A (Tc)
  • Maximum Rds On (Id,Vgs): 3.8 mOhm @ 55A, 10V
  • Drain-Source Breakdown Voltage: 30V
  • Supply and Demand Status: Sufficient

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75+ $1.6078 $120.5850
115+ $1.5569 $179.0435
155+ $1.5073 $233.6315
200+ $1.4565 $291.3000
270+ $1.3063 $352.7010
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