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Same model may have multiple batches, images only for reference.
IPP05N03LB G Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP05N03LB G

Part No IPP05N03LB G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A TO-220
Datasheet
IPP05N03LB G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 40μA
Gate Charge (Qg) (Maximum) @ Vgs 25nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 3209pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 94W (Tc)
Rds On (Maximum) @ Id, Vgs 5.3 mOhm @ 60A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO220-3-1
Package TO-220-3
Win Source Part Number 776897-IPP05N03LB G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP05N03LB G CAD Model

Description

The Infineon Technologies IPP05N03LB G is a MOSFET transistor with a maximum drain-source voltage of 30V and a maximum continuous drain current of 80A (Tc).

  • Series: OptiMOS
  • Package: TO-220-3
  • Gate-Source Threshold Voltage: 2V @ 40μA
  • Gate Charge: 25nC @ 5V
  • Input Capacitance (Ciss): 3209pF @ 15V
  • Rds On: 5.3 mOhm @ 60A, 10V
  • Application: Discrete semiconductor products
  • Power Dissipation: 94W (Tc)
  • Status: Obsolete
  • Supply and Demand Status: Limited

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