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IPP082N10NF2SAKMA1

Part No IPP082N10NF2SAKMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description TRENCH >=100V / N-Channel 100 V 15A (Ta), 77A (Tc) 3.8W (Ta), 100W (Tc) Through Hole PG-TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series StrongIRFET™ 2
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 8.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.8V @ 46µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 50 V
Power Dissipation (Max) 3.8W (Ta), 100W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP082N
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 448-IPP082N10NF2SAKMA1,SP005548849
Standard Package 50
Win Source Part Number 1022144-IPP082N10NF2SAKMA1
Ultra Librarian 3D Model Ultra Librarian IPP082N10NF2SAKMA1 CAD Model

Description

The IPP082N10NF2SAKMA1 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: StrongIRFET™ 2
  • Drain to Source Voltage: 100 V
  • Continuous Drain Current: 15 A @ 25°C
  • Rds On (Max) @ Id, Vgs: 8.2mOhm @ 50A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
  • Package: TO-220-3
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9314 $51.2270
135+ $0.7642 $103.1670
205+ $0.7403 $151.7615
280+ $0.7165 $200.6200
365+ $0.6926 $252.7990
485+ $0.6209 $301.1365
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,370 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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