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Same model may have multiple batches, images only for reference.
IPP086N10N3 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP086N10N3

Part No IPP086N10N3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Datasheet
IPP086N10N3 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 8.6mOhm @ 73A, 10V
Vgs(th) (Max) @ Id 3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3980 pF @ 50 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1378634-IPP086N10N3
Ultra Librarian 3D Model Ultra Librarian IPP086N10N3 CAD Model

Description

The Infineon Technologies IPP086N10N3 is an N-channel MOSFET from Infineon Technologies.

  • Series: OptiMOS™
  • Package: TO-220-3
  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 80A @ 25°C
  • Maximum On-Resistance (Rds On): 8.6mOhm @ 73A
  • Gate Threshold Voltage (Vgs(th)): 3.5V @ 75µA
  • Gate Charge (Qg): 55nC @ 10V
  • Input Capacitance (Ciss): 3980pF @ 50V
  • Mounting Type: Through-Hole

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