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Same model may have multiple batches, images only for reference.
IPP08CN10NG Real Image
Same model may have multiple batches, images only for reference.

IPP08CN10NG

Part No IPP08CN10NG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 95A TO-220
Datasheet
IPP08CN10NG Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 130μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 6660pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 167W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 95A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 069050-IPP08CN10NG
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP08CN10NG CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel power transistor that can handle a maximum power dissipation of 167W at a temperature of 25°C.

  • Maximum Power Dissipation: 167W @ 25°C
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 95A
  • Gate-Source Threshold Voltage: 4V @ 130μA
  • Maximum Gate Charge: 100nC @ 10V
  • Maximum Rds On at Id,Vgs: 8.5 mOhm @ 95A, 10V
  • Package: PG-TO-220-3
  • Temperature Range: -55°C to 175°C
  • Application: Discrete Semiconductor Products

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8+ $15.0924 $120.7392
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22+ $13.6775 $300.9050
29+ $12.2626 $355.6154
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