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Same model may have multiple batches, images only for reference.
IPP100N06S3-03 Real Image
Same model may have multiple batches, images only for reference.

IPP100N06S3-03

Part No IPP100N06S3-03
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 100A TO-220
Datasheet
IPP100N06S3-03 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 230μA
Max Gate Charge 480nC @ 10V
Max Input Capacitance 21620pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1045973-IPP100N06S3-03
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP100N06S3-03 CAD Model

Description

The Infineon Technologies 1045973-IPP100N06S3-03 is an N-channel MOSFET transistor that is designed to be used in various electronic circuits.

  • Maximum Power Dissipation: 300W (Tc)
  • Packaging: tube/rail
  • Mounting: through-hole mounting
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 100A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 230μA
  • Maximum Gate Charge: 480nC @ 10V
  • Maximum Input Capacitance: 21620pF @ 25V
  • Maximum Rds On @ Id, Vgs: 3.3 mOhm @ 80A, 10V
  • Status: obsolete (EOL)
  • Popularity: medium

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