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Same model may have multiple batches, images only for reference.
IRFP451 Samsung
Same model may have multiple batches, images only for reference.

IRFP451

Part No IRFP451
Manufacturer Harris Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Harris Corporation
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 450 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
Power Dissipation (Max) 180W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 605114-IRFP451
Ultra Librarian 3D Model Ultra Librarian IRFP451 CAD Model

Description

The IRFP451 is an N-channel MOSFET transistor in a TO-247-3 package.

  • Drain-to-Source Voltage Rating: 450V
  • Continuous Drain Current Rating: 14A @ 25°C
  • On-Resistance: 400mOhm (Maximum) @ a drain current of 7.9A and a gate-source voltage of 10V
  • Gate Threshold Voltage: 4V
  • Power Dissipation: 180W @ a case temperature of 25°C
  • Mounting: Through-hole

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