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IRFP451

Name: IRFP451
Brand: Harris Corporation
SKU: 605114
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IRFP451
Manufacturer	Harris Corporation
Catalog	Transistors - FETs, MOSFETs - RF
Description	N-CHANNEL POWER MOSFET
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Harris Corporation
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	450 V
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	400mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
Power Dissipation (Max)	180W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-3
Standard Package	1 pcs
MSL Level	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	605114-IRFP451
Ultra Librarian 3D Model	Ultra Librarian IRFP451 CAD Model

Alternative Products

Description

The IRFP451 is an N-channel MOSFET transistor in a TO-247-3 package.

Drain-to-Source Voltage Rating: 450V
Continuous Drain Current Rating: 14A @ 25°C
On-Resistance: 400mOhm (Maximum) @ a drain current of 7.9A and a gate-source voltage of 10V
Gate Threshold Voltage: 4V
Power Dissipation: 180W @ a case temperature of 25°C
Mounting: Through-hole

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