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IPP114N12N3GXKSA1

Part No IPP114N12N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 120V 75A TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 120V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 83μA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 4310pF @ 60V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 11.4 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1045981-IPP114N12N3GXKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPP114N12N3GXKSA1 CAD Model

Description

The Infineon Technologies IPP114N12N3GXKSA1 is an active N-channel MOSFET transistor designed for through-hole mounting.

  • Mounting Type: Through-Hole
  • Case/Package: PG-TO-220-3
  • Dimensions: TO-220-3
  • Maximum Power Dissipation: 136W (Tc)
  • Drive Voltage (max Rds On, min Rds On): 10V
  • Continuous Drain Current (25°C): 75A (Tc)
  • Maximum Rds On (Id,Vgs): 11.4 mOhm @ 75A, 10V
  • Drain-Source Breakdown Voltage: 120V
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $3.1454 $66.0534
51+ $2.5807 $131.6157
78+ $2.5002 $195.0156
107+ $2.4195 $258.8865
139+ $2.3388 $325.0932
186+ $2.0970 $390.0420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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