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IPP14N03LA

Part No IPP14N03LA
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 30A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 8.3nC @ 5V
Max Input Capacitance 1043pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 46W (Tc)
Maximum Rds On at Id,Vgs 13.9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 069060-IPP14N03LA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP14N03LA CAD Model

Description

The Infineon Technologies IPP14N03LA is a MOSFET transistor manufactured by .

  • Category: Discrete Semiconductor Products
  • Polarity: N-Channel
  • Power Dissipation (Max): 46W (Tc)
  • Packaging: Tube/Rail
  • Mounting Type: Through-hole
  • Technology: MOSFET
  • Temperature Range: -55°C to 175°C (TJ)
  • Supplier Device Package: PG-TO-220-3
  • Dimension: TO-220-3
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 30A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 20μA
  • Maximum Gate Charge: 8.3nC @ 5V
  • Maximum Input Capacitance: 1043pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id, Vgs: 13.9 mOhm @ 30A, 10V

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