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Same model may have multiple batches, images only for reference.
IPP25N06S3L-22 Real Image
Same model may have multiple batches, images only for reference.

IPP25N06S3L-22

Part No IPP25N06S3L-22
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 25A TO-220
Datasheet
IPP25N06S3L-22 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.2V @ 20μA
Max Gate Charge 47nC @ 10V
Max Input Capacitance 2260pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 21.6 mOhm @ 17A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1045988-IPP25N06S3L-22
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP25N06S3L-22 CAD Model

Description

The Infineon Technologies IPP25N06S3L-22 MOSFET is an N-channel power MOSFET designed for use in discrete semiconductor products.

  • Power: This MOSFET can dissipate up to 50W of power
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 25A
  • Gate-Source Threshold Voltage: 2.2V @ 20μA
  • Maximum Gate Charge: 47nC @ 10V
  • Maximum Input Capacitance: 2260pF @ 25V
  • Maximum Rds On @ Id,Vgs: 21.6 mOhm @ 17A, 10V
  • Package: PG-TO220-3-1 package
  • Mounting: designed for through-hole mounting
  • Status: now obsolete (EOL).

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