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Same model may have multiple batches, images only for reference.
IPP26CN10NG Real Image
Same model may have multiple batches, images only for reference.

IPP26CN10NG

Part No IPP26CN10NG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 35A TO-220
Datasheet
IPP26CN10NG Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 39μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 2070pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 71W (Tc)
Maximum Rds On at Id,Vgs 26 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 069062-IPP26CN10NG
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP26CN10NG CAD Model

Description

The Infineon Technologies IPP26CN10NG is a N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 71W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 35A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 39μA
  • Maximum Gate Charge: 31nC @ 10V
  • Maximum Rds On at Id,Vgs: 26 mOhm @ 35A, 10V
  • Popularity: Medium
  • Package: PG-TO-220-3
  • Temperature Range: -55°C to 175°C (TJ)

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45+ $2.6207 $117.9315
69+ $2.5387 $175.1703
95+ $2.4567 $233.3865
122+ $2.3747 $289.7134
163+ $2.1298 $347.1574
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Availability: 7,800 pieces
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