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Same model may have multiple batches, images only for reference.
IPP50R299CP Real Image
Same model may have multiple batches, images only for reference.

IPP50R299CP

Part No IPP50R299CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 100 V
Power Dissipation (Max) 104W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 603642-IPP50R299CP
Ultra Librarian 3D Model Ultra Librarian IPP50R299CP CAD Model

Description

The Infineon Technologies 603642-IPP50R299CP is a high-performance N-Channel MOSFET transistor. It is part of the CoolMOS™ series, which ensures superior performance and efficiency.

  • Drain to Source Voltage: 500V
  • Continuous Drain Current: 12A
  • On-Resistance: 299mOhm

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