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Same model may have multiple batches, images only for reference.
IPP60R125P6XKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP60R125P6XKSA1

Part No IPP60R125P6XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V TO220-3 / Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220 Tube
Datasheet
IPP60R125P6XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series CoolMOS P6
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 960μA
Gate Charge (Qg) (Maximum) @ Vgs 56nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2660pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 219W (Tc)
Rds On (Maximum) @ Id, Vgs 125 mOhm @ 11.6A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO-220-3
Package TO-220-3
Win Source Part Number 776911-IPP60R125P6XKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IP60R125P6
Introduction Date March 07, 2014
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian IPP60R125P6XKSA1 CAD Model

Description

The Infineon Technologies IPP60R125P6XKSA1 is a N-channel MOSFET with a maximum drain current of 30A (Tc) and a maximum drain-source voltage of 600V.

  • Maximum Drain Current: 30A (Tc)
  • Maximum Drain-Source Voltage: 600V
  • On-Resistance: 125mOhm @ 11.6A, 10V
  • Gate Charge: 56nC @ 10V
  • Input Capacitance: 2660pF @ 100V
  • Package: TO-220-3
  • Mounting: Through-hole
  • Operating Temperature Range: -55°C to 150°C
  • Series: CoolMOS P6
  • Compliance: RoHS
  • Applications: Power supplies, motor drives, and inverters

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121+ $2.8694 $347.1974
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