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IPP60R190P6XKSA1

Part No IPP60R190P6XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 20.2A TO220-3  /  N-Channel 600 V 20.2A (Tc) 151W (Tc) Through Hole PG-TO220-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P6
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 630µ
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1750 pF @ 100 V
Power Dissipation (Max) 151W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP60R190
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001017066,IPP60R190P6-ND,IPP60R190P6
Standard Package 50
Win Source Part Number 979366-IPP60R190P6XKSA1
Ultra Librarian 3D Model Ultra Librarian IPP60R190P6XKSA1 CAD Model

Description

The IPP60R190P6XKSA1 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™ P6
  • Drain to Source Voltage (Vdss): 600 V
  • Continuous Drain Current (Id) @ 25°C: 20.2A (Tc)
  • Maximum On-Resistance (Rds On) @ Id, Vgs: 190mOhm @ 7.6A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
  • Mounting Type: Through-hole
  • Package: TO-220-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8746 $65.6110
80+ $1.5382 $123.0560
120+ $1.4901 $178.8120
165+ $1.4421 $237.9465
210+ $1.3940 $292.7400
280+ $1.2497 $349.9160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,240 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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