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Same model may have multiple batches, images only for reference.
IPP60R360P7XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP60R360P7XKSA1

Part No IPP60R360P7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 9A TO220-3 / N-Channel 650 V 9A (Tc) 41W (Tc) Through Hole PG-TO220-3
Datasheet
IPP60R360P7XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 555 pF @ 400 V
Power Dissipation (Max) 41W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP60R360
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001606036
Standard Package 50
Win Source Part Number 1218678-IPP60R360P7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPP60R360P7XKSA1 CAD Model

Description

The Infineon Technologies IPP60R360P7XKSA1 is a CoolMOS™ P7 N-channel MOSFET transistor that has a drain to source voltage of 650 V and a maximum continuous drain current of 9A (Tc).

  • Mounting Type: Through Hole
  • Gate Charge: 13 nC @ 10 V
  • Recommended Use: Electronic devices that require high power and high performance

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Quantity Unit Price Ext. Price
7+ $7.2775 $50.9425
17+ $5.9713 $101.5121
26+ $5.7847 $150.4022
36+ $5.5981 $201.5316
47+ $5.4115 $254.3405
62+ $4.8517 $300.8054
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Availability: 20,000 pieces
MOQ: 7 pcs
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