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IPP60R360P7XKSA1

Part No IPP60R360P7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 9A TO220-3 / N-Channel 650 V 9A (Tc) 41W (Tc) Through Hole PG-TO220-3
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 555 pF @ 400 V
Power Dissipation (Max) 41W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Base Product Number IPP60R360
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001606036
Standard Package 50
Win Source Part Number 1218678-IPP60R360P7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPP60R360P7XKSA1 CAD Model

Description

The Infineon Technologies IPP60R360P7XKSA1 is a CoolMOS™ P7 N-channel MOSFET transistor that has a drain to source voltage of 650 V and a maximum continuous drain current of 9A (Tc).

  • Mounting Type: Through Hole
  • Gate Charge: 13 nC @ 10 V
  • Recommended Use: Electronic devices that require high power and high performance

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.2775 $50.9425
17+ $5.9713 $101.5121
26+ $5.7847 $150.4022
36+ $5.5981 $201.5316
47+ $5.4115 $254.3405
62+ $4.8517 $300.8054
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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