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Same model may have multiple batches, images only for reference.
IPP60R385CP Real Image
Same model may have multiple batches, images only for reference.

IPP60R385CP

Part No IPP60R385CP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 9A TO-220
Datasheet
IPP60R385CP Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 340μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 790pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 385 mOhm @ 5.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 069076-IPP60R385CP
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP60R385CP CAD Model

Description

The Infineon Technologies 069076-IPP60R385CP is an N-channel MOSFET with a drain-source breakdown voltage of 650V and a maximum continuous drain current of 9A at 25°C.

  • Power Dissipation: 83W (Tc)
  • Maximum Rds On: 385mOhm @ Id,Vgs of 5.2A and 10V
  • Gate-Source Threshold Voltage: 3.5V @ 340μA
  • Maximum Gate Charge: 22nC @ 10V
  • Maximum Input Capacitance: 790pF @ 100V
  • Maximum Gate-Source Voltage: ±20V
  • Case: PG-TO-220-3
  • Mounting: Through hole
  • Supply and demand status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.9152 $67.0320
75+ $1.5715 $117.8625
115+ $1.5224 $175.0760
160+ $1.4733 $235.7280
205+ $1.4243 $291.9815
275+ $1.2769 $351.1475
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