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IPP65R074C6XKSA1

Part No IPP65R074C6XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 57.7A TO220 / Trans MOSFET N-CH 700V 57.7A 3-Pin(3+Tab) TO-220 Tube
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series CoolMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 57.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.5V @ 1.4mA
Gate Charge (Qg) (Maximum) @ Vgs 17nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3020pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 480.8W (Tc)
Rds On (Maximum) @ Id, Vgs 74 mOhm @ 13.9A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO-220-3
Package TO-220-3
Win Source Part Number 776915-IPP65R074C6XKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPP65R074C6
Introduction Date September 14, 2011
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IPP65R074C6XKSA1 CAD Model

Description

The Infineon Technologies IPP65R074C6XKSA1 is a CoolMOS MOSFET that is suitable for use in discrete semiconductor products.

  • Maximum Power Dissipation: 480.8W
  • Continuous Drain Current: 57.7A @ 25°C
  • Gate Charge: 17nC @ 10V
  • Input Capacitance: 3020pF @ 100V
  • Rds On: 74 mOhm @ 13.9A, 10V
  • Package: TO-220-3
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $16.3637 $65.4548
8+ $13.4266 $107.4128
12+ $13.0070 $156.0840
16+ $12.5874 $201.3984
21+ $12.1679 $255.5259
28+ $10.9091 $305.4548
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,766 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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