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IPP65R095C7XKSA1

Part No IPP65R095C7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V TO-220-3 / Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220 Tube
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series CoolMOS C7
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 590μA
Gate Charge (Qg) (Maximum) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2140pF @ 400V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 128W (Tc)
Rds On (Maximum) @ Id, Vgs 95 mOhm @ 11.8A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO-220-3
Package TO-220-3
Win Source Part Number 776916-IPP65R095C7XKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPP65R095C7
Introduction Date October 11, 2013
ECCN EAR99
Country of Origin China, Malaysia
Halogen Free Compliant
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian IPP65R095C7XKSA1 CAD Model

Description

The IPP65R095C7XKSA1 from Infineon Technologies is a MOSFET transistor that is used in discrete semiconductor products.

  • Series: CoolMOS C7
  • Package: TO-220-3
  • Current-Continuous Drain: 24A @ 25°C
  • Maximum Power Dissipation: 128W
  • Supply and Demand Status: Limited
  • Compliance: Halogen-free
  • Estimated EOL Date: 2030
  • Manufactured In: China and Malaysia
  • Win Source Part Number: 776916-IPP65R095C7XKSA1

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.6237 $52.4740
47+ $2.1528 $101.1816
72+ $2.0855 $150.1560
100+ $2.0183 $201.8300
129+ $1.9510 $251.6790
172+ $1.7492 $300.8624
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 457 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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