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Same model may have multiple batches, images only for reference.
BUK766R0-60E,118 Nexperia USA Inc.
Same model may have multiple batches, images only for reference.

BUK766R0-60E,118

Part No BUK766R0-60E,118
Manufacturer Nexperia USA Inc.
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 75A D2PAK
Datasheet
BUK766R0-60E,118 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Nexperia USA Inc.
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 4520pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 182W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025290-BUK766R0-60E,118
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BUK766R0-60E,118 CAD Model

Description

The Nexperia USA Inc. BUK766R0-60E,118 is an N-Channel MOSFET designed by Nexperia USA Inc. for use in discrete semiconductor products.

  • Manufacturer: Nexperia USA Inc.
  • Type: N-Channel MOSFET
  • Application: Discrete Semiconductor Products
  • Power Dissipation (Max): 182W
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 75A @ 25°C
  • Package: D2PAK
  • Temperature Range: -55°C to 175°C
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Rds On (Max): 6 mOhm @ 25A, 10V

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Quantity Unit Price Ext. Price
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24+ $6.4297 $154.3128
33+ $6.2223 $205.3359
42+ $6.0149 $252.6258
56+ $5.3926 $301.9856
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