The Infineon Technologies IPP65R660CFDXKSA1 is a N-Channel MOSFET with a drain-source breakdown voltage of 650V and a continuous drain current of 6A at 25°C.

• FET Type: N-Channel
• Voltage - Drain to Source Breakdown (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 6A
• Power Dissipation (Max) @ Tc: 62.5 W
• Package / Case: PG-TO-220-3
• Lifecycle Status: Active
• Popularity: Medium
• Rds On (Max) @ Id, Vgs: 660 mOhm @ 2.1A, 10V
• Vgs(th) (Max) @ Id: 4.5V @ 200μA
• Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
• Input Capacitance (Ciss) @ Vds: 615 pF @ 100 V
• Gate-Source Voltage: ±20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Supply and Demand Status: Sufficient