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IPP70N04S3-07

Part No IPP70N04S3-07
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™T
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V
Power Dissipation (Max) 79W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Standard Package 425 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 603671-IPP70N04S3-07
Ultra Librarian 3D Model Ultra Librarian IPP70N04S3-07 CAD Model

Description

The IPP70N04S3-07 is a power transistor in the category of Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs.

  • Series: OptiMOS™T
  • Channel Type: N-channel MOSFET
  • Packaging: Bulk
  • Standard Package Quantity: 425 pcs
  • Technology: MOSFET (Metal Oxide)
  • Drain-to-Source Voltage Rating: 40V
  • Continuous Drain Current Rating @ 25°C: 80A
  • On-Resistance: 6.5mOhm @ 70A and 10V
  • Gate Threshold Voltage: 4V @ 50µA
  • Maximum Power Dissipation: 79W
  • Mounting Type: Through hole
  • Package: TO-220-3
  • Manufacturer: Infineon Technologies
  • Status: Active
  • Applications: Power switching

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