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Same model may have multiple batches, images only for reference.
IPP70N10SL16AKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP70N10SL16AKSA1

Part No IPP70N10SL16AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 70A TO220-3
Datasheet
IPP70N10SL16AKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 2mA
Max Gate Charge 240nC @ 10V
Max Input Capacitance 4540pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1046026-IPP70N10SL16AKSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP70N10SL16AKSA1 CAD Model

Description

The Infineon Technologies 1046026-IPP70N10SL16AKSA1 is a N-Channel MOSFET with a maximum power dissipation of 250W (Tc) and a drain-source breakdown voltage of 100V.

  • Channel Type: N-Channel
  • Maximum Power Dissipation: 250W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 70A @ 25°C (Tc)
  • Gate-Source Threshold Voltage: 2V @ 2mA
  • Maximum Gate Charge: 240nC @ 10V
  • Maximum Input Capacitance: 4540pF @ 25V
  • Maximum Rds On: 16 mOhm @ 50A, 10V
  • Package: PG-TO220-3-1
  • Dimensions: TO-220-3
  • Category: Discrete Semiconductor Products
  • Recommendation: Not recommended for new designs

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