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Same model may have multiple batches, images only for reference.
IPP80CN10NGXKSA1
Same model may have multiple batches, images only for reference.

IPP80CN10NGXKSA1

Part No IPP80CN10NGXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description PFET, 13A I(D), 100V, 0.08OHM, 1 / N-Channel 100 V 13A (Tc) 31W (Tc) Through Hole PG-TO220-3-123
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 2
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 716 pF @ 50 V
Power Dissipation (Max) 31W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-123
Package / Case TO-220-3
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 964223-IPP80CN10NGXKSA1
Ultra Librarian 3D Model Ultra Librarian IPP80CN10NGXKSA1 CAD Model

Description

The 964223-IPP80CN10NGXKSA1 is an N-Channel MOSFET transistor from the OptiMOS™ 2 series.

  • Series: OptiMOS™ 2
  • Drain-to-Source Voltage: 100V
  • Continuous Drain Current: 13A @ 25°C
  • Maximum On-Resistance: 80mOhm @ 13A and 10V
  • Gate Threshold Voltage: 4V @ 12μA
  • Maximum Power Dissipation: 31W
  • Mounting: Through Hole
  • Package: TO-220-3
  • Gate Charge: 11nC @ 10V
  • Operating Temperature Range: -55°C to 175°C
  • Manufacturer: Infineon Technologies

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