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Same model may have multiple batches, images only for reference.
IPP80N06S3L-06 Real Image
Same model may have multiple batches, images only for reference.

IPP80N06S3L-06

Part No IPP80N06S3L-06
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO-220
Datasheet
IPP80N06S3L-06 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.2V @ 80μA
Max Gate Charge 196nC @ 10V
Max Input Capacitance 9417pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 5.9 mOhm @ 56A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1046039-IPP80N06S3L-06
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP80N06S3L-06 CAD Model

Description

The Infineon Technologies IPP80N06S3L-06 is an N-channel MOSFET transistor that is designed to handle high power dissipation.

  • Maximum Power Dissipation: 136W
  • Case: packaged in a PG-TO220-3-1 case
  • Maximum Rds on at Id and Vgs: 5.9 mOhm @ 56A and 10V
  • Suitable for: use in high-current applications
  • Status: obsolete (EOL)
  • Popularity: medium popularity rating in the market
  • Commonly used in: applications such as power supplies, motor control, and lighting.

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