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Same model may have multiple batches, images only for reference.
IPP80P04P4L08AKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPP80P04P4L08AKSA1

Part No IPP80P04P4L08AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH TO220-3
Datasheet
IPP80P04P4L08AKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 120μA
Max Gate Charge 92nC @ 10V
Max Input Capacitance 5430pF @ 25V
Maximum Gate-Source Voltage +5V, -16V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 8.2 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 1046045-IPP80P04P4L08AKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPP80P04P4L08AKSA1 CAD Model

Description

The IPP80P04P4L08AKSA1 is a P-Channel MOSFET transistor from Infineon Technologies with a drain-source breakdown voltage of 40V and a continuous drain current of 80A (Tc) at 25°C.

  • On-Resistance: 8.2 mOhm @ 80A and 10V
  • Gate Charge: 92nC @ 10V
  • Mounting Type: Through-Hole
  • Package: PG-TO220-3-1

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Quantity Unit Price Ext. Price
15+ $4.0806 $61.2090
35+ $3.3483 $117.1905
54+ $3.2432 $175.1328
74+ $3.1393 $232.3082
96+ $3.0342 $291.2832
128+ $2.7212 $348.3136
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Availability: 3,500 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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