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Same model may have multiple batches, images only for reference.
IPP90R340C3XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP90R340C3XKSA1

Part No IPP90R340C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 15A TO-220
Datasheet
IPP90R340C3XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1mA
Max Gate Charge 94nC @ 10V
Max Input Capacitance 2400pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 340 mOhm @ 9.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1046048-IPP90R340C3XKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPP90R340C3XKSA1 CAD Model

Description

The IPP90R340C3XKSA1 is a N-Channel MOSFET from Infineon Technologies.

  • FET Type: N-Channel
  • Voltage - Drain to Source Breakdown (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
  • Rds On (Max) @ Id, Vgs: 340 mOhm @ 9.2A, 10V
  • Power Dissipation (Max) @ Tc: 208 W
  • Package / Case: PG-TO-220-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $4.5357 $58.9641
32+ $3.7216 $119.0912
49+ $3.6054 $176.6646
67+ $3.4890 $233.7630
86+ $3.3728 $290.0608
115+ $3.0238 $347.7370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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