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Same model may have multiple batches, images only for reference.
IPS050N03L Infineon Technologies
Same model may have multiple batches, images only for reference.

IPS050N03L

Part No IPS050N03L
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A TO251-3
Datasheet
IPS050N03L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 3200pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 68W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 069088-IPS050N03L
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPS050N03L CAD Model

Description

The IPS050N03L is a N-Channel MOSFET transistor, manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 50A (Tc)
  • Maximum Rds On: 5 mOhm @ 30A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 31nC @ 10V
  • Applications: high voltage, high speed power switching
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Suitable for: Power supplies, motor control, and lighting systems.

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62+ $4.7055 $291.7410
83+ $4.2192 $350.1936
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